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Thread: Antec Edge Series 650 W review @ TechPowerUp

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    Quote Originally Posted by McSteel View Post
    What Travis said refers to this particular platform. And, of course, any other that is similar enough. Dead time duration and efficiency impact are dependent on the switching frequency and the general topology of the PSU.
    Although i'm completely ignorant with PSUs electrical analysis, the logical conclusion from what you are saying is that if in this particular platform were used full SR , the efficiency would have been lower than semi SR, and this decision has nothing to do with the cost factor?
    Last edited by sith'ari; 12-17-2014 at 05:35 AM.
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    ok made a little search, read again my books and got the picture.
    Thanks Travis for shading light into this.

    So actually in plain words this unit doesn't have a semi-SR but a full one since the rectification is done solely by the mosfets. The SBRs (which could be plain diodes as well but then the gain would be smaller due to higher voltage drops of the plain diodes compared to SBRs) are there just to enhance the build-in diode of the fets.

    A question now arises. This design applies only when an LLC resonant converter is present in the primary or it can be used with plain double-forward topologies, too. Because so far all double-forward topologies with SBRs and mosfets in the secondary side are called a semi-SR (at least to the best of my knowledge).

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    All the double-forwards using FETs and SBRs that I have seen, use SBRs for freewheeling and FETs for rectification. So they are "true semi-SR".
    Careful what you wish for... You just might get it.

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    Quote Originally Posted by McSteel View Post
    All the double-forwards using FETs and SBRs that I have seen, use SBRs for freewheeling and FETs for rectification. So they are "true semi-SR".
    Or the opposite way, SBRs for rectification and FETs for freewheeling. For example, CoolerMaster Real Power Pro 1000W. This is "true semi-SR" too.
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    Quote Originally Posted by crmaris View Post
    A question now arises. This design applies only when an LLC resonant converter is present in the primary or it can be used with plain double-forward topologies, too. Because so far all double-forward topologies with SBRs and mosfets in the secondary side are called a semi-SR (at least to the best of my knowledge).
    In SR design a certain amount of dead time is usually necessary to prevent the FETs from cross-conduction. So in theory an SBR in parallel with the body-diode of freewheeling FET helps efficiency. However not much SR designs use additional SBRs. This is because:

    1. The dead time is less than a few percent of the switching cycle, making the efficiency gain (in proper designs) negligible compared to the added components cost.

    2. The common TO-220, DPAK or D2PAK packages add a small parasitic inductance to the schottky diode, making the schottky diode conduct slower. Since the dead time is only tens of nanoseconds long, a slow external diode doesn't help much. However, if the design require the SR dead time to be longer, an external SBR can show its advantage over the body-diode.
    It's been a hard day's night and I've been working like a dog.

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